摘要
介绍了一种采用0.18μm CMOS工艺制作的上电复位电路。为了满足低电源电压的设计要求,采用低阈值电压(约0V)NMOS管和设计的电路结构,获得了合适的复位电压点;利用反馈结构加速充电,提高了复位信号的陡峭度;利用施密特触发器,增加了电路的迟滞效果。电路全部采用MOS管设计,大大缩小了版图面积。该上电复位电路用于一种数模混合信号芯片,采用0.18μm CMOS工艺进行流片。芯片样品电路测试表明,该上电复位电路工作状态正常。
A power-on reset（POR） circuit based on 0.18 μm CMOS process was presented.To meet the design target of low supply voltage,low threshold voltage（≈0 V） NMOS transistors were used,and optimized circuit structure was designed to obtain the desired reset voltage point.In this circuit,feedback structure was employed to obtain charge boosting for steep reset signal,and Schmitt trigger was used to achieve hysteresis.The circuit was composed of MOS transistors,so the layout size was small.The POR circuit was used as a sub-circuit in a mixed signal IC,which was fabricated in 0.18 μm CMOS IC process.Test results showed that the POR circuit operated normally.
出处
《微电子学》
CAS
CSCD
北大核心
2012年第2期238-241,共4页
Microelectronics
基金
国家自然科学基金资助项目(60906009
61176030)
中国博士后科学基金资助项目(20090451423)
重庆市科委基金资助项目(CSTC2010AA2004)
