摘要
针对非晶硅和有机薄膜晶体管的低迁移率问题,以高纯Zn为靶材,反应磁控溅射沉积、且在不同温度下退火的ZnO薄膜作为半导体活性层,成功地制备出基于ZnO材料的薄膜晶体管(ZnO-TFT),研究了退火温度对ZnO-TFT电特性的影响.结果表明:ZnO-TFT的载流子迁移率随退火温度的升高而明显增大,700℃退火的样品迁移率为8.00cm2/(V.s),阈值电压随退火温度的升高而明显减小,在较高温度下退火处理制备的ZnO-TFT呈现出较低的关态电流.结合X射线衍射谱、原子力显微镜和X射线光电子能谱对ZnO薄膜的微结构及组分的分析,发现ZnO-TFT性能随退火温度升高的改善来源于退火温度的升高使ZnO薄膜的晶粒尺寸增大且更均匀、外形更规整、表面更光滑,氧含量更少.
Aiming at the low mobilities of the thin film transistors respectively based on amorphous silicon and organic semiconductor, ZnO thin-film transistors （ZnO-TFTs） were successfully prepared by means of the reactive magnetron sputtering from a high-purity Zn metal target, with the ZnO thin-films annealed at different temperatures as the active layer. The effects of the annealing temperature on the electrical properties of the ZnO-TFTs were investigated. The results show that the carrier mobility of the ZnO-TFTs obviously increases with the annealing temperature, which is up to 8.00 cm2/（ V · s） at 700℃, while the threshold voltage obviously decreases with the increase of the annealing temperature, and that ZnO-TFTs with the annealing treatment at a higher temperature is of lower OFF-state current. Moreover, according to the microstructure and compositions of the ZnO thin-films characterized by means of XRD, AFM and XPS, it is concluded that the performance improvement of the ZnO-TFTs with the increase of the annealing temperature is attributed to the facts that the increase of the temperature results in larger and more uniform grain size, lower surface roughness and lower Oxygen content.
出处
《华南理工大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2011年第9期103-107,共5页
Journal of South China University of Technology(Natural Science Edition)
基金
国家自然科学基金资助项目(61076113)
广东省自然科学基金资助项目(8451064101000257)
华南理工大学中央高校基本科研业务费专项资金资助项目(2011ZM0027)
广东省大学生创新实验项目(S1010561035)
关键词
薄膜晶体管
氧化锌
电特性
退火温度
thin film transistors
zinc oxide
electrical properties
annealing temperature
