摘要
建立了锁相环中电荷泵模型，对比无补偿和Cr补偿下电路的稳定裕度，提出了一种新的改善电荷泵稳定性的RcCc补偿方法，应用这种方法设计了一款高摆幅、低电流失配的电荷泵。电路采用HJTC0.18μm CMOS工艺实现，应用于3.5 GHz的锁相环频率综合器，电源电压1.8 V，输出电流100μA，输出电压0.4-1.4 V时，后仿的电流失配在1%以下，相位裕度达74°，版图面积130μm×80μm。
A stability model of charge pump was built, and the stability of charge pump between no compensation and Creompensation was compared. A new method called RcCc compensation was proposed to improve the stability of charge pump. The method was utilized to achieve a charge pump with large dynamic range and low current mismatch. The circuit was implemented in HJTC 0.18 μm CMOS process and was used in a 3.5 GHz PLL frequency-synthesizer. The charge pump provides 100 μA output current and has a below 1% current mismatch, 0.4 - 1.4 V output dynamic range with 1.8 V power supply. Phase margin of the charge pump is 74° and the area of layout is 130 μm × 80 μm.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第6期510-513,共4页
Semiconductor Technology
基金
中国科学院创新项目基金
关键词
电荷泵
电流失配
稳定性补偿
charge oumo
current mismatch
compensation of stability
