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聚天冬氨酸对铜缓蚀作用的光电化学研究 被引量:7

Photoelectrochemical study of inhibition mechanism of PASP on copper
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摘要 用光电化学方法研究了绿色水处理药剂聚天冬氨酸对铜的缓蚀作用,铜在硼酸-硼砂缓冲溶液(pH=9.2)中,表面的Cu2O膜显p-型光响应,添加适量缓蚀剂聚天冬氨酸(PASP)后,PASP吸附在铜电极表面成膜促使Cu2O膜增厚,体现在电位在负向扫描过程中Cu2O膜的p-型光电流增大。p-型光电流越大,缓蚀性能越好。当PASP浓度为3mg·L-1时,Cu2O膜的p-型光电流最大,缓蚀性能最好。Cl-的存在会阻止PASP在铜电极表面的吸附,使Cu2O膜暴露而受侵蚀,导致了PASP的缓蚀性能变差。 The inhibition mechanism of polyaspartic (PASP) on copper electrode in a borax buffer solution was studied by the photocurrent response method. The copper electrode in a borax buffer solution showed p-type photocurrent response which came from Cu2O layer on its surface. The photocurrent response during cathodic polarization became bigger when inhibitor PASP which could be adsorbed on the Cu electrode and make Cu2O layer thicker was added. The bigger the photocurrent response, the better the inhibition effect. When adding PASP with a concentration of 3 mg·L^-1 , the photocurrent response was the biggest and inhibition of copper corrosion was the best. Cl^- could prevent PASP from being absorbed and make Cu2O layer unprotected, resulting in worse inhibition.
出处 《化工学报》 EI CAS CSCD 北大核心 2008年第3期665-669,共5页 CIESC Journal
基金 国家自然科学基金项目(20406009) 上海市曙光计划项目(04SG55) 上海市教委重点项目(06ZZ67) 上海市科委科技攻关计划项目(062312045) 厦门大学固体表面物理化学国家重点实验室开放课题项目(200512) 上海市重点学科项目(P1304)~~
关键词 聚天冬氨酸 光电化学 缓蚀剂 PASP photoelectrochemistry inhibitor copper
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