摘要
用溶胶-凝胶法制备均匀透明的TiO2薄膜,在400℃锻烧2h,再在一定浓度的硫酸中浸泡处理24h,最后在300℃、400℃、500℃进行第二次热处理0.5h.用X射线衍射、原子力显微镜、紫外-可见分光光度计表征了处理前后薄膜的晶相结构、表面形貌及薄膜的光学性能.研究了硫酸处理的浓度对薄膜光催化降解亚甲基兰溶液的影响.实验表明:用硫酸浸泡处理后的薄膜光催化性能有明显提高,而且增强了光催化剂的抗失活性能.XRD、光谱及AFM分析表明,导致TiO2薄膜光催化性能改善的原因是硫酸浸泡处理后的薄膜表面结构、晶粒尺寸发生了变化.硫酸的最佳浓度为0.4mol/L.
The uniform transparent TiO2 nanometer thin film was prepared with sol-gel method at 400℃ for 2 h.The as-calcined TiO2 nanometer thin film was treated in different H2SO4 aqueous solution for 24 h.Finally, the treated TiO2 thin film was again heat-treated at300℃400℃、500℃ for 0.5h respectively.The structure of TiO2 thin film before and after tAS surface acid treatment was characterized by XRD、AFM、UV-vis. Studied the effect of concentration of H2SO4 on photodegradation of methylene blue, the results show that ...
出处
《电子器件》
CAS
2007年第6期2007-2010,共4页
Chinese Journal of Electron Devices
基金
中国博士后基金资助(20060390878)
湖南省博士基金资助
