摘要
采用体光栅对商用线阵半导体激光器进行线宽压缩,得到线宽0.1nm、中心波长780.2nm、最高连续输出功率80W的泵浦激光输出。为了降低热效应,通过外加斩波器将泵浦光转化为脉冲模式,脉宽440μs,占空比为1∶5。采用长度为5mm的铷金属饱和蒸气作为增益介质,并在常温下充入33kPa乙烷和47kPa氦气,进行了出光实验。在泵浦峰值功率35.4W,铷吸收池温度120℃时,得到峰值功率600mW的795nm铷激光输出,斜率效率为1.7%。
By incorporating a commercial diode-laser-bar into a volume Bragg grating（VBG） based external cavity,we obtained 80 W CW output power with 0.1 nm linewidth centered at 780.2 nm.To reduce the thermal effect,a chopper was used to convert the CW pump light into pulsed mode,with pulse duration of 440 μs and duty ratio of 1∶5.The 5 mm long gain medium was filled with metallic Rb and buffer gases of 33 kPa ethane and 47 kPa helium at room temperature.At peak pump power of 35.4 W and gain medium temperature of 120 ℃,we obtained 600 mW peak power output of the 795 nm Rb laser with slope efficiency of 1.7%.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2011年第9期2273-2274,共2页
High Power Laser and Particle Beams
